S82S115F

Technical Characteristics

• Bit Quantity (Non-Core)

  4096

• Body Height

  0.130 inches minimum and 0.170 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Maximum Power Dissipation Rating

  165.0 milliwatts

• Features Provided

  3-state output and w/strobe and schottky and programmable and bipolar and w/enable and hermetically sealed

• Memory Device Type

  prom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Input Circuit Pattern

  12 input

• Body Length

  1.235 inches minimum and 1.290 inches maximum

• Inclosure Configuration

  dual-in-line

• Overall Height

  0.306 inches minimum and 0.475 inches maximum

• Terminal Type And Quantity

  24 printed circuit

• Word Quantity (Non-Core)

  512

• Body Width

  0.620 inches maximum

• Output Logic Form

  transistor-transistor logic