2N3822
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3822
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Channel Polarity And Control Type
n-channel junction type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Mounting Method
terminal
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
-50.0 minimum breakdown voltage, gate-to-source, with all other terminals short-circuited to source and 50.0 maximum drain to gate voltage and 50.0 maximum drain to source voltage
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Precious Material And Location
terminal surfaces gold
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Internal Configuration
field effect
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Field Force Effect Type
electrostatic charge
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Current Rating Per Characteristic
10.00 milliamperes maximum gate current and 0.10 nanoamperes maximum reverse gate current with all other terminals short-circuit to source, junction-gate
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Precious Material
gold
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Terminal Type And Quantity
4 uninsulated wire lead