3N225

Semiconductor Devices and Associated Hardware

TRANSISTOR

3N225

5961-01-040-4446

5961 - Semiconductor Devices and Associated Hardware

Texas Instruments Incorporated

TRANSISTOR

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Technical Characteristics

  • Overall Length

    0.170 inches minimum and 0.210 inches maximum

  • Terminal Circle Diameter

    0.100 inches nominal

  • Current Rating Per Characteristic

    10.00 milliamperes zero-gate-voltage source current horsepower metric and -10.00 milliamperes zero-gate-voltage source current torr

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Mounting Method

    terminal

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Power Rating Per Characteristic

    360.0 milliwatts small-signal input power, common-collector absolute

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Length

    0.500 inches minimum

  • Voltage Rating In Volts Per Characteristic

    25.0 maximum drain to gate voltage and 20.0 maximum drain to source voltage

  • Test Data Document

    13499-352-1038 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Terminal Type And Quantity

    4 uninsulated wire lead

Certified to
AS6081 Methods

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