SD1468-H12
Semiconductor Devices and Associated Hardware
TRANSISTOR
SD1468-H12
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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~1
emitter-to-base, collector open
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to emitter reverse voltage, with base short-circuited to emitter and 33.0 maximum breakdown voltage, collector-to-emitter, base open and 50.0 maximum collector to emitter reverse voltage and 4.0 maximum breakdown voltage,
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Power Rating Per Characteristic
140.0 watts small-signal input power, common-collector minimum
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Terminal Type And Quantity
3 ribbon
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Overall Length
0.235 inches minimum and 0.300 inches maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
press fit
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Inclosure Material
metal
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Current Rating Per Characteristic
8.00 amperes source cutoff current maximum
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Overall Diameter
0.490 inches minimum and 0.510 inches maximum