JAN2N3053
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N3053
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector to emitter, with specified voltage between base and emitter and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, collector-to-emitter, base open and 50.0 maximum
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~1
breakdown voltage, collector-to-emitter, with
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Current Rating Per Characteristic
700.00 milliamperes source cutoff current maximum
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Overall Length
0.065 inches minimum and 0.085 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Specification/Standard Data
80131-release5879 professional/industrial association specification