JAN2N3053A

Semiconductor Devices and Associated Hardware

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JAN2N3053A

5961-01-042-5479

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum breakdown voltage, collector to emitter, with specified voltage between base and emitter and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, collector-to-emitter, base open and 50.0 maximum

  • ~1

    breakdown voltage, collector-to-emitter, with

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Overall Diameter

    0.209 inches minimum and 0.230 inches maximum

  • Current Rating Per Characteristic

    700.00 milliamperes source cutoff current maximum

  • Overall Length

    0.065 inches minimum and 0.085 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Inclosure Material

    metal

  • Specification/Standard Data

    80131-release5879 professional/industrial association specification

Certified to
AS6081 Methods

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