2N5455
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5455
5961 - Semiconductor Devices and Associated Hardware
Grippe Machining And Manufacturing
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Electrode Internally-Electrically Connected To Case
collector
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Mounting Method
terminal
-
Overall Diameter
0.209 inches minimum and 0.230 inches maximum
-
Special Features
junction pattern arrangement: pnp
-
Internal Configuration
junction contact
-
Voltage Rating In Volts Per Characteristic
15.0 maximum breakdown voltage, collector-to-emitter, base open and 15.0 maximum breakdown voltage, collector-to-base, emitter open and 4.5 maximum breakdown voltage, emitter-to-base, collector open
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Terminal Circle Diameter
0.100 inches nominal
-
Overall Length
0.115 inches minimum and 0.150 inches maximum
-
Inclosure Material
metal
-
Terminal Length
0.500 inches nominal
-
Current Rating Per Characteristic
300.00 milliamperes source cutoff current maximum
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Power Rating Per Characteristic
340.0 milliwatts small-signal input power, common-collector minimum
-
Specification/Standard Data
80131-release5848 professional/industrial association specification