2N5070

Technical Characteristics

• Internal Configuration

  junction contact

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  65.0 nominal breakdown voltage, collector-to-base, emitter open

• Overall Width

  0.480 inches maximum

• Terminal Type And Quantity

  3 pin

• Inclosure Material

  metal

• Mounting Method

  threaded stud

• Power Rating Per Characteristic

  70.0 watts small-signal input power, common-collector minimum

• Mounting Facility Quantity

  1

• Nominal Thread Size

  0.190 inches

• Thread Series Designator

  unf

• Internal Junction Configuration

  npn

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius ambient air

• Overall Length

  0.320 inches maximum

• Electrode Internally-Electrically Connected To Case

  emitter