DCA2N5885
Semiconductor Devices and Associated Hardware
TRANSISTOR
DCA2N5885
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Overall Length
1.573 inches maximum
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Test Data Document
02101-80807 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Overall Height
0.250 inches minimum and 0.450 inches maximum
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Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector minimum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
2 uninsulated wire lead
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Features Provided
hermetically sealed case
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Overall Width
1.050 inches maximum
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Current Rating Per Characteristic
7.50 amperes source cutoff current minimum and 25.00 amperes source cutoff current maximum
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction