56602-40003-1

Technical Characteristics

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic and glass

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Test Data Document

  97384-56602-40003 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Output Logic Form

  transistor-transistor logic

• Features Provided

  high speed and w/disable and monolithic and hermetically sealed and positive outputs and programmable and programmed and bipolar and w/decoded output and expandable and wire-or outputs and 3-state output and w/buffered output and w/enable

• Bit Quantity (Non-Core)

  1024

• Body Length

  0.750 inches minimum and 0.770 inches maximum

• Word Quantity (Non-Core)

  256

• Body Width

  0.260 inches minimum and 0.280 inches maximum

• Body Height

  0.140 inches minimum and 0.160 inches maximum

• Time Rating Per Chacteristic

  70.00 nanoseconds maximum propagation delay time, low to high level output and 70.00 nanoseconds maximum propagation delay time, high to low level output

• Input Circuit Pattern

  10 input

• Terminal Type And Quantity

  16 printed circuit