Q05660F

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Voltage Rating In Volts Per Characteristic

  200.0 maximum collector to emitter voltage/static/base open and 250.0 maximum collector to base voltage/static/emitter open and 6.0 maximum emitter to base voltage, static, collector open

• Semiconductor Material

  silicon

• Mounting Facility Quantity

  2

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 case

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Mounting Method

  unthreaded hole

• Precious Material And Location

  terminal surface option gold

• Inclosure Material

  metal

• Power Rating Per Characteristic

  20.0 watts small-signal input power, common-collector preset

• Overall Length

  1.252 inches maximum

• Test Data Document

  81349-mil-s-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Overall Height

  0.340 inches maximum

• Overall Width

  0.700 inches maximum

• Current Rating Per Characteristic

  500.00 milliamperes source cutoff current minimum and 2.00 amperes source cutoff current maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-66

• Electrode Internally-Electrically Connected To Case

  collector

• Precious Material

  gold

• Specification/Standard Data

  81349-mil-s-19500/454 government specification

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn