45SX477
Semiconductor Devices and Associated Hardware
TRANSISTOR
45SX477
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.375 inches nominal
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage,collector-to-base,emitter open and 70.0 maximum breakdown voltage,collector-to-emitter,base open and 7.0 maximum breakdown voltage,emitter-to-base,collector open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
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Overall Diameter
0.875 inches maximum
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Mounting Facility Quantity
2
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Internal Junction Configuration
npn
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Mounting Method
unthreaded hole
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Current Rating Per Characteristic
7.00 amperes maximum base current,dc and 15.00 amperes maximum collector current,dc
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Power Rating Per Characteristic
115.0 watts maximum collector power dissipation
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case