128C111H01
Semiconductor Devices and Associated Hardware
TRANSISTOR
128C111H01
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
75.0 maximum collector to base voltage/static/emitter open and 50.0 maximum collector-to-emitter, resistance between base and emitter and 30.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter to base voltage, static,
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Mounting Method
terminal
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Internal Configuration
junction contact
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Specification/Standard Data
81349-mil-prf-19500/181 government specification
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Test Data Document
81349-mil-prf-19500 specification
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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~1
collector open
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Terminal Circle Diameter
0.200 inches nominal
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Internal Junction Configuration
npn
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Electrode Internally-Electrically Connected To Case
collector
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Terminal Length
0.500 inches minimum
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Inclosure Material
metal
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Terminal Type And Quantity
3 uninsulated wire lead
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Power Rating Per Characteristic
3.0 watts nominal small-signal input power, common-emitter
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Current Rating Per Characteristic
500.00 milliamperes maximum collector current, dc