AP111335M
Semiconductor Devices and Associated Hardware
TRANSISTOR
AP111335M
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Facility Quantity
1
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Terminal Type And Quantity
3 pin
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Voltage Rating In Volts Per Characteristic
300.0 maximum breakdown voltage, collector-to-emitter, base open and 3.0 maximum breakdown voltage, emitter-to-base, collector open
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Special Features
junction pattern arrangement: pnp
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Overall Height
0.095 inches minimum and 0.105 inches maximum
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Internal Configuration
junction contact
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Power Rating Per Characteristic
20.0 watts small-signal input power, common-collector minimum
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Features Provided
hermetically sealed case
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Overall Length
0.295 inches minimum and 0.305 inches maximum
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Semiconductor Material
silicon
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Inclosure Material
plastic
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current maximum
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Overall Width
0.277 inches maximum
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Mounting Method
unthreaded hole