44BB112
Semiconductor Devices and Associated Hardware
TRANSISTOR
44BB112
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
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Overall Length
0.325 inches minimum and 0.460 inches maximum
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Mounting Facility Quantity
1
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Internal Junction Configuration
npn
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Overall Width Across Flats
0.667 inches minimum and 0.687 inches maximum
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Voltage Rating In Volts Per Characteristic
90.0 maximum breakdown voltage,collector-to-emitter,base open and 100.0 maximum breakdown voltage,collector-to-emitter,with base short-circuited to emitter and 6.0 maximum breakdown voltage,emitter-to-base,collector open and 2.2 maximum base to emitter
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Test Data Document
03640-6096669 drawing
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Thread Series Designator
unf
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Inclosure Material
metal
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Internal Configuration
junction contact
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.250 inches
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Semiconductor Material
silicon
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~1
saturation voltage
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Current Rating Per Characteristic
10.00 amperes maximum collector current,dc and 500.00 microamperes maximum collector cutoff current,dc,with specified circuit between base and emitter and 1.00 microamperes maximum emitter cutoff current,dc,collector open
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Power Rating Per Characteristic
83.0 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
3 tab,solder lug