69SP222
Semiconductor Devices and Associated Hardware
TRANSISTOR
69SP222
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Test Data Document
82577-928196 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Special Features
junction pattern arrangement: pnp
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Current Rating Per Characteristic
0.50 amperes source cutoff current minimum and 1.00 amperes source cutoff current maximum
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Precious Material
gold
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Internal Configuration
junction contact
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Power Rating Per Characteristic
10.0 watts small-signal input power, common-collector absolute
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Precious Material And Location
eutetic die attachment gold
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Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage, collector-to-emitter, base open and 120.0 maximum breakdown voltage, collector-to-base, emitter open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Semiconductor Material
silicon
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Terminal Length
1.500 inches minimum
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction