5032436-00
Semiconductor Devices and Associated Hardware
TRANSISTOR
5032436-00
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage,collector-to-base,emitter open and 40.0 maximum breakdown voltage,collector-to-emitter,base open and 5.0 maximum breakdown voltage,emitter-to-base,collector open and 50.0 maximum breakdown voltage,collector to emitter,with
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Current Rating Per Characteristic
4.00 amperes maximum collector current,dc and 2.00 amperes maximum base current,dc
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Power Rating Per Characteristic
5.8 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
glass and metal
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Overall Length
0.297 inches nominal
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Overall Diameter
0.620 inches maximum
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Mounting Method
unthreaded hole
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~1
specified voltage between base and emitter
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case