N82S115I
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
N82S115I
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Output Logic Form
transistor-transistor logic
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Inclosure Material
ceramic and metal
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Maximum Power Dissipation Rating
675.0 milliwatts
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Word Quantity (Non-Core)
512
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Terminal Type And Quantity
24 printed circuit
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Body Width
0.580 inches minimum and 0.610 inches maximum
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Inclosure Configuration
dual-in-line
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Operating Temp Range
+0.0/+75.0 deg celsius
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Input Circuit Pattern
12 input
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Terminal Surface Treatment
solder
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Body Height
0.080 inches minimum and 0.120 inches maximum
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Capacity
unknown
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Memory Device Type
prom
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Features Provided
programmed and positive outputs and monolithic and hermetically sealed and programmable and 3-state output and w/disable and w/strobe and w/storage and schottky and high speed and w/enable and w/decoded output
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Test Data Document
08783-37654883 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Body Length
1.190 inches minimum and 1.230 inches maximum
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Time Rating Per Chacteristic
35.00 nanoseconds maximum propagation delay time, low to high level output and 45.00 nanoseconds maximum propagation delay time, high to low level output
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Voltage Rating And Type Per Characteristic
-1.5 volts minimum power source and 5.5 volts maximum power source
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Bit Quantity (Non-Core)
4096