N82S115I

Technical Characteristics

• Bit Quantity (Non-Core)

  4096

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay time, low to high level output and 45.00 nanoseconds maximum propagation delay time, high to low level output

• Body Length

  1.190 inches minimum and 1.230 inches maximum

• Test Data Document

  08783-37654883 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Memory Device Type

  prom

• Memory Capacity

  unknown

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Height

  0.080 inches minimum and 0.120 inches maximum

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Inclosure Configuration

  dual-in-line

• Body Width

  0.580 inches minimum and 0.610 inches maximum

• Features Provided

  programmable and 3-state output and w/disable and w/strobe and w/storage and w/enable and high speed and schottky and positive outputs and monolithic and hermetically sealed and programmed and w/decoded output

• Terminal Type And Quantity

  24 printed circuit

• Word Quantity (Non-Core)

  512

• Maximum Power Dissipation Rating

  675.0 milliwatts

• Inclosure Material

  ceramic and metal

• Output Logic Form

  transistor-transistor logic