W1990B
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
W1990B
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Test Data Document
82577-925947 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Voltage Rating In Volts Per Characteristic
100.0 maximum repetitive peak reverse voltage
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Terminal Type And Quantity
3 ribbon
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Electrode Internally-Electrically Connected To Case
gate
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Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector blank
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Overall Diameter
0.592 inches minimum and 0.660 inches maximum
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Semiconductor Material
silicon
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Special Features
junction pattern arrangement: pnpn
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Inclosure Material
glass and metal
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Maximum Operating Temp Per Measurement Point
110.0 deg celsius ambient air
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Mounting Method
press fit
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Overall Length
0.190 inches maximum
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Current Rating Per Characteristic
12.00 amperes forward current, total rms watts