IM5624MDE

Technical Characteristics

• Features Provided

  3-state output

• Features Provided

  hermetically sealed and

• Features Provided

  high speed and

• Features Provided

  monolithic and

• Features Provided

  negative outputs and

• Features Provided

  programmed and

• Features Provided

  w/enable and

• Features Provided

  w/storage and

• Inclosure Material

  ceramic and

• Output Logic Form

  transistor-transistor logic

• Input Circuit Pattern

  10 input

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Time Rating Per Chacteristic

  30.00 nanoseconds maximum propagation delay time, high to low level output

• Memory Device Type

  rom

• Test Data Document

  03640-6086173 drawing

• Terminal Type And Quantity

  16 printed circuit

• Body Width

  0.245 inches minimum and

• Body Width

  0.300 inches maximum

• Body Height

  0.120 inches minimum and

• Maximum Power Dissipation Rating

  650.0 milliwatts

• Operating Temp Range

  -55.0 to 125.0 deg celsius

• Iii End Item Identification

  countermeasures set type an/alq-99e(v)

• Body Length

  0.750 inches minimum and

• Body Length

  0.795 inches maximum

• Body Height

  0.195 inches maximum

• Storage Temp Range

  -65.0 to 150.0 deg celsius

• Features Provided

  bipolar and

• Features Provided

  positive outputs and

• Features Provided

  programmable and

• Features Provided

  w/buffered output and

• Features Provided

  w/decoded output and

• Features Provided

  w/disable and

• Inclosure Material

  glass

• Inclosure Configuration

  dual-in-line

• Bit Quantity

  2048

• Word Quantity

  512

• Case Outline Source And Designator

  m0-001-ag joint electron device engineering council

• Time Rating Per Chacteristic

  30.00 nanoseconds maximum propagation delay time, low to high level output and

• Iii Unpackaged Unit Weight

  2.2 grams