2N1711
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1711
5961 - Semiconductor Devices and Associated Hardware
Raytheon Technical Services Company
TRANSISTOR
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Technical Characteristics
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
75.0 maximum collector to base voltage/static/emitter open and 50.0 maximum collector to emitter reverse voltage and 7.0 maximum emitter to base voltage, static, collector open
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Power Rating Per Characteristic
3.0 watts small-signal input power, common-collector preset
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Test Data Document
80063-sm-b-528765 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Terminal Length
1.500 inches minimum
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Overall Length
0.240 inches minimum and 0.260 inches maximum