D45H8B
Semiconductor Devices and Associated Hardware
TRANSISTOR
D45H8B
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
plastic
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Mounting Facility Quantity
1
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Mounting Method
unthreaded hole
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Power Rating Per Characteristic
50.0 watts maximum total power dissipation
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Special Features
junction pattern arrangement: pnp
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Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction
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Current Rating Per Characteristic
100.00 milliamperes maximum collector current, dc
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Voltage Rating In Volts Per Characteristic
-60.0 maximum breakdown voltage, collector-to-emitter, base open and -5.0 maximum breakdown voltage, emitter-to-base, collector open
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Semiconductor Material
silicon
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Internal Configuration
junction contact
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Overall Width
0.328 inches minimum and 0.355 inches maximum
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Overall Height
0.160 inches minimum and 0.190 inches maximum
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Overall Length
0.390 inches minimum and 0.420 inches maximum
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Terminal Type And Quantity
3 uninsulated wire lead