2N6329
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6329
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-emitter, base open and 30.0 maximum collector to emitter voltage, dc
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Power Rating Per Characteristic
200.0 watts maximum total device dissipation
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Inclosure Material
metal
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Overall Length
0.250 inches minimum and 0.450 inches maximum
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Overall Diameter
0.875 inches maximum
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
30.00 amperes maximum collector current, dc and 1.00 milliamperes maximum collector cutoff current, dc, with specified circuit between base and emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
2 pin and 1 case
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Specification/Standard Data
80131-release6355 professional/industrial association specification