582R191H01

Technical Characteristics

• Power Rating Per Characteristic

  1300.0 milliwatts small-signal input power, common-collector absolute all transistor

• Features Provided

  hermetically sealed case

• Overall Height

  0.200 inches maximum

• Overall Width

  0.300 inches nominal

• Semiconductor Material

  silicon all transistor

• Overall Length

  0.785 inches maximum

• Voltage Rating In Volts Per Characteristic

  60.0 maximum collector to base voltage, dc all transistor and 40.0 maximum collector to emitter voltage/static/base open all transistor and 5.0 maximum emitter to base voltage, instantaneous all transistor

• Inclosure Material

  plastic

• Special Features

  all transistor junction pattern arrangement: npn

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  14 ribbon

• Current Rating Per Characteristic

  500.00 milliamperes source cutoff current maximum all transistor

• Component Name And Quantity

  4 transistor

• Mounting Method

  press fit