SDT9202
Semiconductor Devices and Associated Hardware
TRANSISTOR
SDT9202
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
115.0 watts small-signal input power, common-collector preset
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, collector-to-emitter, base open and 100.0 maximum breakdown voltage, collector-to-base, emitter open and 12.0 maximum breakdown voltage, emitter-to-base, collector open
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Internal Configuration
field effect
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Inclosure Material
metal
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Overall Diameter
0.715 inches minimum and 0.740 inches maximum
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Current Rating Per Characteristic
7.00 amperes source cutoff current minimum and 15.00 amperes source cutoff current maximum
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Overall Length
0.328 inches minimum and 0.380 inches maximum