578R648H02
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
578R648H02
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Iii Precious Material And Location
stud gold
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Iii Precious Material
gold
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Overall Width Across Flats
0.250 inches nominal
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Voltage Rating In Volts Per Characteristic
120.0 maximum reverse voltage, instantaneous and 100.0 maximum reverse voltage, peak
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Inclosure Material
glass and metal
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Mounting Facility Quantity
1
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.138 inches
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Semiconductor Material
silicon
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Current Rating Per Characteristic
12.00 amperes maximum average forward current averaged over a full 60-hz cycle and 200.00 amperes maximum forward current, dc
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Thread Series Designator
unc
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Terminal Type And Quantity
2 turret
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Overall Length
0.790 inches nominal