2N4972
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N4972
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-106
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Internal Junction Configuration
pnp
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Mounting Method
terminal
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Semiconductor Material
silicon
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Current Rating Per Characteristic
500.00 milliamperes maximum collector current,dc
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Specification/Standard Data
80131-release5424 professional/industrial association specification
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Inclosure Material
plastic
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Overall Length
0.120 inches minimum and 0.240 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.192 inches minimum and 0.222 inches maximum
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Terminal Circle Diameter
0.095 inches minimum and 0.105 inches maximum
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage,collector-to-base,emitter open and 40.0 maximum breakdown voltage,collector-to-emitter,base open and 5.0 maximum breakdown voltage,emitter-to-base,collector open
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Power Rating Per Characteristic
200.0 milliwatts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Terminal Type And Quantity
4 uninsulated wire lead