VBE890-2N3490
Semiconductor Devices and Associated Hardware
TRANSISTOR
VBE890-2N3490
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Facility Quantity
1
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Overall Length
0.170 inches minimum and 0.213 inches maximum
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Voltage Rating In Volts Per Characteristic
80.0 maximum collector to base voltage/static/emitter open and 60.0 maximum collector to emitter voltage/static/base open and 10.0 maximum emitter to base voltage, static, collector open
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Power Rating Per Characteristic
115.0 watts small-signal input power, common-collector absolute
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Mounting Method
threaded stud
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Terminal Type And Quantity
3 tab, solder lug
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Overall Diameter
0.667 inches minimum and 0.687 inches maximum
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
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Inclosure Material
metal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-61