S82S09F
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
S82S09F
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Test Data Document
49956-759856 drawing
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Inclosure Material
ceramic and metal
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Inclosure Configuration
dual-in-line
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(Non-Core Data) Bit Quantity
576
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(Non-Core Data) Word Quantity
64
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Body Length
1.380 inches minimum and 1.430 inches maximum
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Body Width
0.580 inches minimum and 0.610 inches maximum
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Maximum Power Dissipation Rating
750.0 milliwatts
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Storage Temp Range
-65.0 to 150.0 deg celsius
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Iii End Item Identification
radar set type an/fps-115
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Features Provided
hermetically sealed and monolithic and positive outputs and w/enable and w/decoded output and w/buffered output
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Body Height
0.080 inches minimum and 0.120 inches maximum
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Operating Temp Range
-55.0 to 125.0 deg celsius
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Output Logic Form
transistor-transistor logic
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Input Circuit Pattern
17 input
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Terminal Surface Treatment
solder
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Voltage Rating And Type Per Characteristic
5.5 volts maximum power source
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Time Rating Per Chacteristic
50.00 nanoseconds maximum propagation delay time, low to high level output and 50.00 nanoseconds maximum propagation delay time, high to low level output
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Memory Device Type
rom
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Terminal Type And Quantity
28 printed circuit