N82S123F

Technical Characteristics

• Inclosure Material

  ceramic and glass

• Inclosure Configuration

  dual-in-line

• Bit Quantity (Non-Core)

  256

• Body Length

  0.780 inches minimum and 0.808 inches maximum

• Features Provided

  hermetically sealed and bipolar and monolithic and high speed and positive outputs and 3-state output and programmable and programmed and w/buffered output and w/enable and w/disable

• Output Logic Form

  transistor-transistor logic

• Maximum Power Dissipation Rating

  625.0 milliwatts

• Test Data Document

  23259-es52spl-a2u13 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Operating Temp Range

  +0.0/+70.0 deg celsius

• Word Quantity (Non-Core)

  32

• Input Circuit Pattern

  6 input

• Body Width

  0.240 inches minimum and 0.280 inches maximum

• Body Height

  0.134 inches minimum and 0.179 inches maximum

• Time Rating Per Chacteristic

  50.00 nanoseconds maximum propagation delay time, low to high level output and 50.00 nanoseconds maximum propagation delay time, high to low level output

• Storage Temp Range

  -65.0/+150.0 deg celsius