N82S115F

Technical Characteristics

• ~1

  w/storage

• Maximum Power Dissipation Rating

  804.4 milliwatts

• Bit Quantity (Non-Core)

  4096

• Body Length

  1.190 inches minimum and 1.230 inches maximum

• Precious Material And Location

  terminals gold and lid gold

• Precious Material

  gold

• Time Rating Per Chacteristic

  60.00 nanoseconds maximum propagation delay time, low to high level output

• Memory Capacity

  unknown

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Body Height

  0.080 inches minimum and 0.120 inches maximum

• Input Circuit Pattern

  12 input

• Inclosure Material

  ceramic and glass

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Inclosure Configuration

  dual-in-line

• Body Width

  0.580 inches minimum and 0.610 inches maximum

• Terminal Type And Quantity

  24 printed circuit

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Features Provided

  programmable and programmed and 3-state output and w/strobe and high speed and w/disable and w/buffered output and bipolar and w/decoded output and expandable and w/enable and schottky and hermetically sealed and monolithic and positive outputs and

• Word Quantity (Non-Core)

  512

• Test Data Document

  23259-es52spl-a5u45 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Terminal Surface Treatment

  gold

• Output Logic Form

  transistor-transistor logic