8584052-301

Technical Characteristics

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Features Provided

  hermetically sealed and monolithic and positive outputs

• Inclosure Configuration

  dual-in-line

• Input Circuit Pattern

  dual 4 input

• Case Outline Source And Designator

  t0-116 joint electron device engineering council

• Time Rating Per Chacteristic

  80.00 nanoseconds maximum propagation delay time,low to high level output and 30.00 nanoseconds maximum propagation delay time,high to low level output

• Unpackaged Unit Weight

  2.0 grams

• Body Length

  0.660 inches minimum and 0.785 inches maximum

• Body Width

  0.220 inches minimum and 0.280 inches maximum

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Maximum Power Dissipation Rating

  200.0 milliwatts

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Inclosure Material

  ceramic and glass

• Output Logic Form

  diode-transistor logic

• Design Function And Quantity

  2 gate,nand-nor

• Test Data Document

  49671-8584052 drawing