N82S115F

Technical Characteristics

• Precious Material And Location

  terminal surfaces gold and l1d gold

• Terminal Type And Quantity

  24 printed circuit

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Word Quantity (Non-Core)

  512

• Maximum Power Dissipation Rating

  675.0 milliwatts

• Terminal Surface Treatment

  gold

• Inclosure Material

  ceramic and metal

• Output Logic Form

  transistor-transistor logic

• Bit Quantity (Non-Core)

  4096

• Features Provided

  positive outputs and monolithic and hermetically sealed and schottky and high speed and w/enable and w/storage and w/strobe and w/disable and 3-state output and programmable and programmed and w/decoded output

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay time, low to high level output and 45.00 nanoseconds maximum propagation delay time, high to low level output

• Body Length

  1.190 inches minimum and 1.230 inches maximum

• Precious Material

  gold

• Test Data Document

  23259-es52spl-a5u77 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Memory Capacity

  unknown

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Body Height

  0.080 inches minimum and 0.120 inches maximum

• Input Circuit Pattern

  12 input

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Inclosure Configuration

  dual-in-line

• Body Width

  0.580 inches minimum and 0.610 inches maximum