14SE131
Semiconductor Devices and Associated Hardware
TRANSISTOR
14SE131
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Test Data Document
99971-7541503 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Internal Junction Configuration
npn
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Current Rating Per Characteristic
10.00 amperes source cutoff current minimum and 15.00 amperes source cutoff current maximum and 25.00 amperes source cutoff current blank
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Voltage Rating In Volts Per Characteristic
9.0 maximum emitter to base voltage, dc and 400.0 maximum breakdown voltage, collector to emitter, sustained
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Overall Diameter
0.875 inches maximum
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Semiconductor Material
silicon
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Power Rating Per Characteristic
175.0 watts small-signal input power, common-collector absolute
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Internal Configuration
junction contact-darlington connected
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Features Provided
mounting hardware
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Overall Length
0.250 inches minimum and 0.450 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to.3