2N5326
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5326
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
TRANSISTOR
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Technical Characteristics
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Test Data Document
30003-446as177 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Voltage Rating In Volts Per Characteristic
120.0 maximum collector to base voltage/static/emitter open and 80.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage, static, collector open
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Current Rating Per Characteristic
1.00 amperes source cutoff current minimum and 5.00 amperes source cutoff current maximum
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Mounting Method
threaded stud
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Overall Width Across Flats
0.424 inches minimum and 0.437 inches maximum
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Mounting Facility Quantity
1
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Nominal Thread Size
0.190 inches
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Thread Series Designator
unf
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
3 tab, solder lug
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Power Rating Per Characteristic
2.0 watts small-signal input power, common-collector preset
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Semiconductor Material
silicon
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Overall Diameter
0.440 inches maximum
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Overall Length
0.320 inches minimum and 0.468 inches maximum
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Function For Which Designed
switching
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Internal Configuration
junction contact-darlington connected
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-59
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Inclosure Material
metal
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Features Provided
mounting hardware