1002AS650

Technical Characteristics

• Current Rating Per Characteristic

  8.00 amperes source cutoff current maximum all transistor

• Component Function Relationship

  matched

• Power Rating Per Characteristic

  125.0 watts small-signal input power, common-collector absolute all transistor

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-204aa all transistor

• Semiconductor Material

  silicon all transistor

• Voltage Rating In Volts Per Characteristic

  350.0 maximum breakdown voltage, collector-to-emitter, base open all transistor

• Internal Junction Configuration

  npn all transistor

• Features Provided

  hermetically sealed case

• Terminal Type And Quantity

  1 case all transistor and 2 pin all transistor

• Internal Configuration

  junction contact all transistor

• Overall Width

  1.050 inches maximum all transistor

• Inclosure Material

  metal all transistor

• Special Features

  beta of each transistor shall be matched within 10 pct when the collector current is loaded to 2.0 amp

• Component Name And Quantity

  2 transistor

• Mounting Method

  unthreaded hole all transistor

• Overall Height

  0.350 inches nominal all transistor

• Mounting Facility Quantity

  2 all transistor

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction all transistor

• Overall Length

  1.653 inches maximum all transistor