SD1240-H1
Semiconductor Devices and Associated Hardware
TRANSISTOR
SD1240-H1
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Power Rating Per Characteristic
10.0 watts small-signal input power, common-collector preset
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Inclosure Material
ceramic
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Mounting Facility Quantity
1
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to base voltage/static/emitter open and 40.0 maximum collector to emitter voltage/static/base open and 4.0 maximum emitter to base voltage, static, collector open
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Thread Series Designator
unc
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Overall Length
0.145 inches minimum and 0.165 inches maximum
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Current Rating Per Characteristic
0.15 amperes source cutoff current minimum and 0.50 amperes source cutoff current maximum
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Test Data Document
80063-sm-a-726659 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Semiconductor Material
silicon
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-117
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Nominal Thread Size
0.164 inches
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius case
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Terminal Type And Quantity
4 ribbon
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Overall Diameter
0.355 inches minimum and 0.375 inches maximum