MCR649AP-1
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
MCR649AP-1
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
1.540 inches maximum
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Overall Height
0.410 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Current Rating Per Characteristic
25.00 amperes maximum forward current, dc
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Power Rating Per Characteristic
5.0 watts maximum peak gate power-forward
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Terminal Type And Quantity
2 pin
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Overall Width
1.010 inches maximum
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Function For Which Designed
rectifier
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Mounting Facility Quantity
2
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
bracket and unthreaded hole
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Voltage Rating In Volts Per Characteristic
1.4 maximum on voltage, forward voltage drop, dc and 25.0 maximum repetitive peak reverse voltage, maximum peak total value, gate terminal open-circuited
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction