151-0505
Semiconductor Devices and Associated Hardware
TRANSISTOR
151-0505
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector to emitter, sustained and 80.0 maximum breakdown voltage, collector-to-base, emitter open
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Terminal Circle Diameter
9.390 millimeters maximum
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Special Features
low frequency power silicon pnp bjt
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Terminal Type And Quantity
4 uninsulated wire lead
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Current Rating Per Characteristic
2.00 milliamperes zero-gate-voltage source current blank
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Mounting Facility Quantity
4
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Maximum Operating Temp Per Measurement Point
-55.0 deg celsius case and 175.0 deg celsius case
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Semiconductor Material
silicon
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Overall Length
51.050 millimeters maximum
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Overall Diameter
0.315 inches minimum and 0.335 inches maximum
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Terminal Length
6.600 millimeters maximum
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Inclosure Material
glass
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-39
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Mounting Method
terminal
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Power Rating Per Characteristic
8.0 milliwatts small-signal input power, common-emitter absolute