2N5430

Technical Characteristics

• Overall Width

  0.700 inches maximum

• Voltage Rating In Volts Per Characteristic

  100.0 maximum collector to emitter voltage/static/base open and 100.0 maximum collector to base voltage, dc and 6.0 maximum emitter to base voltage, dc

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-66

• Electrode Internally-Electrically Connected To Case

  collector

• Precious Material And Location

  leads plated gold

• Power Rating Per Characteristic

  40.0 watts small-signal input power, common-collector absolute

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Current Rating Per Characteristic

  1.00 amperes source cutoff current minimum and 7.00 amperes source cutoff current maximum

• Semiconductor Material

  silicon

• Test Data Document

  13499-352-8508 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Terminal Type And Quantity

  2 pin and 1 case

• Mounting Facility Quantity

  2

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Overall Height

  0.348 inches maximum

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Overall Length

  1.252 inches maximum