19A134060P2
Semiconductor Devices and Associated Hardware
TRANSISTOR
19A134060P2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Overall Diameter
0.350 inches minimum and 0.380 inches maximum
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Thread Series Designator
unc
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Internal Configuration
junction contact
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Voltage Rating In Volts Per Characteristic
-36.0 maximum breakdown voltage, collector-to-base, emitter open and -18.0 maximum breakdown voltage, collector-to-emitter, base open and -4.0 maximum breakdown voltage, emitter-to-base, collector open
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Current Rating Per Characteristic
10.00 milliamperes source cutoff current maximum
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Special Features
power output 17 watts; junction pattern arrangement: npn
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Function For Which Designed
amplifier
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Terminal Type And Quantity
4 ribbon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Length
0.280 inches maximum
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Inclosure Material
metal
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Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector absolute
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Features Provided
mounting hardware
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Test Data Document
08771-19a134060 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Semiconductor Material
silicon
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Nominal Thread Size
0.164 inches