SD1379-H2
Semiconductor Devices and Associated Hardware
TRANSISTOR
SD1379-H2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Precious Material And Location
chip metallization and internal @wires gold
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unc
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Precious Material
gold
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Special Features
ceramic case contains beryllium oxide - handle and dispose iaw hazmat procedures; junction pattern arrangement: npn
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Internal Configuration
junction contact
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Current Rating Per Characteristic
250.00 milliamperes source cutoff current maximum
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Semiconductor Material
silicon
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Inclosure Material
ceramic and metal
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Nominal Thread Size
0.164 inches
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Terminal Type And Quantity
4 ribbon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector preset
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Overall Length
0.640 inches nominal
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Test Data Document
13499-352-1059 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Voltage Rating In Volts Per Characteristic
55.0 maximum breakdown voltage, collector-to-base, emitter open and 33.0 maximum breakdown voltage, collector-to-emitter, base open and 3.5 maximum breakdown voltage, emitter-to-base, collector open