HR 3N200
Semiconductor Devices and Associated Hardware
TRANSISTOR
HR 3N200
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Length
0.500 inches minimum and 0.750 inches maximum
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Internal Configuration
field effect-dual gate
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Channel Polarity And Control Type
p-channel insulated gate type
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Mounting Method
terminal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
20.0 maximum drain to source voltage and 6.0 maximum gate to source voltage and 20.0 maximum drain to gate voltage
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Current Rating Per Characteristic
50.00 milliamperes maximum drain current
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Power Rating Per Characteristic
330.0 milliwatts maximum total power dissipation
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Overall Diameter
0.178 inches minimum and 0.195 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Test Data Document
96906-mil-std-883 standard
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Terminal Type And Quantity
4 uninsulated wire lead