RT1016L
Semiconductor Devices and Associated Hardware
TRANSISTOR
RT1016L
5961 - Semiconductor Devices and Associated Hardware
Raytheon Technical Services Company
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Test Data Document
13499-352-1059 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
-
Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-emitter, base open and 55.0 maximum breakdown voltage, collector-to-base, emitter open and 3.5 maximum breakdown voltage, emitter-to-base, collector open
-
Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector preset
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Terminal Type And Quantity
4 ribbon
-
Nominal Thread Size
0.164 inches
-
Inclosure Material
ceramic and metal
-
Semiconductor Material
silicon
-
Features Provided
hermetically sealed case
-
Overall Diameter
0.320 inches maximum
-
Current Rating Per Characteristic
250.00 milliamperes source cutoff current maximum
-
Special Features
junction pattern arrangement: npn
-
Internal Configuration
junction contact
-
Precious Material
gold
-
Precious Material And Location
chip metallization and internal wires gold
-
Overall Length
0.170 inches nominal
-
Thread Series Designator
unc
-
Mounting Facility Quantity
1
-
Mounting Method
threaded stud