FBN-L157
Semiconductor Devices and Associated Hardware
TRANSISTOR
FBN-L157
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.875 inches maximum
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Mounting Facility Quantity
2
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-3
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Current Rating Per Characteristic
7.00 amperes maximum base current, dc and 15.00 amperes maximum collector current, dc
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Power Rating Per Characteristic
115.0 watts maximum collector power dissipation
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Terminal Type And Quantity
1 case and 2 pin
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Overall Length
0.250 inches minimum and 0.450 inches maximum
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Internal Configuration
junction contact
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Mounting Method
unthreaded hole
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Features Provided
mounting hardware and hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
45.0 maximum collector to base voltage, dc and 4.0 maximum collector to emitter voltage, dc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction