5S33H
Semiconductor Devices and Associated Hardware
TRANSISTOR
5S33H
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to base voltage/static/emitter open and 45.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage, static, collector open
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Power Rating Per Characteristic
600.0 milliwatts small-signal input power, common-collector preset
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-18
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Current Rating Per Characteristic
30.00 milliamperes source cutoff current maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Semiconductor Material
silicon
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Overall Length
0.190 inches nominal
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Test Data Document
18876-10176161 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Overall Diameter
0.220 inches nominal