2N6488

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N6488

5961-01-068-4141

5961 - Semiconductor Devices and Associated Hardware

Lockheed Martin Corp

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    80.0 maximum collector to emitter voltage/static/base open and 90.0 maximum collector to emitter voltage, dc with specified circuit between base and emitter and 90.0 maximum collector to emitter reverse voltage and 90.0 maximum collector to base

  • Mounting Facility Quantity

    1

  • Mounting Method

    bracket and unthreaded hole

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-220ab

  • Overall Length

    0.560 inches minimum and 0.625 inches maximum

  • Overall Width

    0.380 inches minimum and 0.420 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Overall Height

    0.140 inches minimum and 0.190 inches maximum

  • Semiconductor Material

    silicon

  • Inclosure Material

    plastic

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Terminal Type And Quantity

    3 pin

  • Power Rating Per Characteristic

    75.0 watts small-signal input power, common-collector preset

  • Current Rating Per Characteristic

    5.00 amperes source cutoff current minimum and 15.00 amperes source cutoff current maximum

  • ~1

    voltage/static/emitter open and 5.0 maximum emitter to

Certified to
AS6081 Methods

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