2N6569
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6569
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Current Rating Per Characteristic
5.00 amperes source cutoff current minimum and 12.00 amperes source cutoff current maximum
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
-
Electrode Internally-Electrically Connected To Case
collector
-
Voltage Rating In Volts Per Characteristic
45.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
-
Overall Diameter
0.875 inches maximum
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Features Provided
hermetically sealed case and mounting hardware
-
Semiconductor Material
silicon
-
Terminal Type And Quantity
1 case and 2 pin
-
Power Rating Per Characteristic
100.0 watts small-signal input power, common-collector maximum
-
Mounting Facility Quantity
2
-
Specification/Standard Data
80131-release6595 professional/industrial association specification
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Mounting Method
unthreaded hole
-
Inclosure Material
metal
-
Overall Length
0.250 inches minimum and 0.450 inches maximum