JAN2N1772A
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
JAN2N1772A
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Internal Junction Configuration
pnpn
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
400.0 maximum reverse voltage, peak and 30.0 maximum breakover voltage, dc and 2.0 maximum gate trigger voltage, dc
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Inclosure Material
metal
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Overall Length
0.300 inches minimum and 0.400 inches maximum
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Mounting Facility Quantity
1
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-64
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Nominal Thread Size
0.190 inches
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Criticality Code Justification
feat
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Semiconductor Material
silicon
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Current Rating Per Characteristic
4.70 amperes maximum average on-state current, 180 degrees conduction angle, average over a full 60-hz cycle
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Special Features
item must comply with reqt of desc production std no. l02589; for navy nuclear propulsion plant product only
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Thread Series Designator
unf
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Terminal Type And Quantity
1 threaded stud and 2 tab, solder lug